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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION *Low Noise *High Gain APPLICATIONS *Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25 0.1 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4265 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10A ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= 20 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.5 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 A VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain--Bandwidth Product IC= 10mA ; VCE= 10V 600 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.5 pF isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4265 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4265 isc Websitewww.iscsemi.cn 4 |
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